| 摘要 |
<p>A method for manufacturing a mask of the semiconductor device is provided to implement the mask pattern with the simple section same with the original mask lay out by adding the dummy pattern. A method for manufacturing a mask of the semiconductor device includes the step for decreasing the complexity of the mask pattern corrected by the only optical proximity correction than the case of performing the correction with the optical proximity correction; the step for forming the dummy pattern(302) with the predetermined distance from the part in which the complexity of the mask pattern is low corrected with the optical proximity correction. The complexity by the correction of mask pattern is getting decreased by lowering the correction level of the section segment corresponding to the optical proximity correction.</p> |
