Phase shift mask, method of exposure, and method of producing semiconductor device

摘要

A phase shift mask including a first phase shifter through which light passes by a first optical path length; a second phase shifter through which light passes by a second optical path length inverted in an optical phase from the first optical path length, the second phase shifter formed away from the first phase shifter by a predetermined distance; a light-blocking part formed around the first phase shifter and second phase shifter; and a correction pattern provided at a part of at least one of the first phase shifter and second phase shifter for correcting a distribution of light intensity between light passing through the first phase shifter and light passing through the second phase shifter, and method of exposure and method of producing a semiconductor device using the phase shift mask.