| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce the area of a nonvolatile memory region, relating to a semiconductor device which has a nonvolatile memory cell including a charge storage part in a gate insulating film. <P>SOLUTION: Such erasing method is used as, with a memory gate electrode 11A provided with a corner part 11cn to which an electric field locally concentrates, the electric charge in the memory gate electrode 11A is injected into the charge storage part in a gate insulating film 2a by FN tunnel operation. Since the power consumption at erasing is reduced by the FN tunnel, a power source circuit area of a memory module can be reduced. Further, since a write disturb resistance is improved, more simple memory array configuration can be employed to reduce memory array. The area of a memory module can be significantly reduced with both effects, to reduce a manufacturing cost. Since the injection charge center of write erasure agrees, overwriting resistance is improved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
