发明名称 |
Method and Reactor for Continuous Production of Semiconductor Grade Silicon |
摘要 |
This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon.
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申请公布号 |
US2008292525(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20050571992 |
申请日期 |
2005.07.01 |
申请人 |
INSTITUTT FOR ENERGITEKNIKK |
发明人 |
ERIKSEN DAG O.;GORSET ODDVAR |
分类号 |
C01B33/03;B01J19/00 |
主分类号 |
C01B33/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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