发明名称 Method and Reactor for Continuous Production of Semiconductor Grade Silicon
摘要 This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon.
申请公布号 US2008292525(A1) 申请公布日期 2008.11.27
申请号 US20050571992 申请日期 2005.07.01
申请人 INSTITUTT FOR ENERGITEKNIKK 发明人 ERIKSEN DAG O.;GORSET ODDVAR
分类号 C01B33/03;B01J19/00 主分类号 C01B33/03
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