发明名称 |
METHODS AND CIRCUITS FOR GENERATING A HIGH VOLTAGE AND RELATED SEMICONDUCTOR MEMORY DEVICES |
摘要 |
Methods of generating a program voltage for programming a non-volatile memory device include generating an initial voltage and generating a first ramping voltage in response to the initial voltage. The first ramping voltage has a ramping speed slower than the ramping speed of the initial voltage. A second ramping voltage is generated in response to the first ramping voltage. The second ramping voltage has a lower ripple than the first ramping voltage. The second ramping voltage is output as a program voltage for programming a non-volatile memory device. A program voltage generating circuit includes a program voltage generating unit configured to generate an initial voltage, a ramping circuit configured to generate a first ramping voltage responsive to the initial voltage, and a voltage controlling unit configured to generate a second ramping voltage having relatively low ripple and to output the first ramping voltage or the second ramping voltage responsive to a voltage level of the first ramping voltage. Semiconductor memory devices including program voltage generating circuits are also disclosed.
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申请公布号 |
US2008291738(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080186087 |
申请日期 |
2008.08.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE DONG-HYUK;LIM YOUNG-HO |
分类号 |
G11C16/06;G05F1/10;G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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