ORGANIC ELECTRODES AND ELECTRONIC DEVICES

摘要

A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one gate disposed on the gate insulator second side; wherein the gate does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the device further comprising a substrate to support the transistor. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. The transistor can be a field effect transistor, an organic field effect transistor, or a thin- film transistor. A polymer substrate can be used. Applications include printed electronics.