发明名称 |
EBENEN-NEUAUSRICHTUNG NACH EINEM EPITAXIESCHRITT |
摘要 |
<p>The invention relates to inter-level realignment after a stage of epitaxy on a face (31) of a substrate (30), comprising the production of at least one initial guide mark (32) on the face of the substrate, this initial guide mark being designed so as to be transferred, during epitaxy, onto the surface of the epitaxied layer (36). The initial guide mark (32) is produced in such a way that, during epitaxy, its edges create growth defects that propagate as far as the surface of the epitaxied layer (36) to provide a transferred guide mark (37) on the surface of the epitaxied layer (36) reproducing the shape of the initial guide mark (32) and in alignment with the initial guide mark.</p> |
申请公布号 |
DE602005003567(T2) |
申请公布日期 |
2008.11.27 |
申请号 |
DE20056003567T |
申请日期 |
2005.04.20 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;FREESCALE SEMICONDUCTOR INC. |
发明人 |
DIEM, BERNARD;BLANCHET, EUGENE;GOGOI, BISHNU |
分类号 |
H01L21/68;H01L21/20;H01L23/544 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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