摘要 |
Reconfigurable electronic structures and circuits using programmable, non-volatile memory elements. The programmable, non-volatile memory elements may perform the functions of storage and/or a switch to produce components such as crossbars, multiplexers, look-up tables (LUTs) and other logic circuits used in programmable logic structures (e.g. (FPGAs)). The programmable, non-volatile memory elements comprise one or more structures based on Phase Change Memory, Programmable Metallization, Carbon Nanotube Nano-Electromechanical (CNT-NEM), or Metal Nano-Electromechanical device technologies.
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申请人 |
CSWITCH CORPORATION;MURPHY, COLIN, N.;DERHACOBIAN, NARBEH;KORDUS, LOUIS, C., II;OLIVA, ANTONIETTA;CHAN, VEI-HAN;STEWART, THOMAS, E., JR. |
发明人 |
MURPHY, COLIN, N.;DERHACOBIAN, NARBEH;KORDUS, LOUIS, C., II;OLIVA, ANTONIETTA;CHAN, VEI-HAN;STEWART, THOMAS, E., JR. |