| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of conducting continuous etching without forming a fluoride as a byproduct within a low temperature range, and to provide a substrate treatment apparatus. <P>SOLUTION: The manufacturing method of the semiconductor device includes steps of carrying a substrate 200 into a treatment chamber 201, forming a high dielectric constant film on the substrate 200 by supplying a raw material gas into the treatment chamber 201, carrying out the substrate 200 on which the film is formed from the inside of the treatment chamber 201, and cleaning the inside of the treatment chamber by supplying the O<SB>3</SB>gas and the gas including Cl into the treatment chamber 201 and removing the film adhered to the inside of the treatment chamber by setting a flow rate of the O<SB>3</SB>gas for that of the gas including Cl to 2n times or larger when the number of Cl atoms included in the gas including Cl is defined as n. In addition, the thus-manufactured substrate treatment apparatus is presented. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
