EVALUATION ELEMENT FOR NON-VOLATILE MEMORY CELL, SEMICONDUCTOR CHIP CONTAINING THE SAME, WAFER, AND METHOD FOR MANUFACTURING THE CELL AND CHIP

摘要

PROBLEM TO BE SOLVED: To comprehend the electric characteristics of a split gate type non-volatile semiconductor memory with high precision. SOLUTION: This evaluation element (1) for a non-volatile memory cell is configured of: a first insulating film (12) formed on a semiconductor substrate (4); a first conductor film (9) formed on the first insulating film (12); second and third conductor films (7)(8) formed so as to be faced to each other at the both ends of the first conductor film (9); and first and second diffusion layers (5)(6) formed inside the semiconductor substrate (4) positioned corresponding to the side faces of the second and third conductor films (7)(8). This evaluation element (1) is also configured of an electrode contact (16) for measurement, and a pad for applying a voltage is connected through the electrode contact (16) for measurement to the first conductor film (9). COPYRIGHT: (C)2009,JPO&INPIT