| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its fabrication process which attain acceleration by reducing R<SB>ON</SB>and Q<SB>SW</SB>. SOLUTION: The present invention relates to a semiconductor device comprising: a base region of a second conductivity type provided on a semiconductor layer of a first conductivity type; a source region of the first conductivity type provided on the base region of the second conductivity type; a trench through the source region of the first conductivity type and the base region of the second conductivity type to the semiconductor layer of the first conductivity type; a gate insulating film covering an inner wall of the trench; a gate electrode buried in the trench via the gate insulating film; and a region of the second conductivity type which is adjacent to the base region of the second conductivity type lower than the source region of the first conductivity type and is provided away from the gate insulating film and in which a density is higher than that in the base region of the second conductivity type. The semiconductor device is characterized in that, when a depth from an upper face of the source region of the first conductivity type to a lower end of the gate electrode is defined as (c) and a depth from the upper face of the source region of the first conductivity type to a lower face of the base region of the second conductivity type is defined as (d), the condition of c≥d is established. COPYRIGHT: (C)2009,JPO&INPIT
|
