发明名称 |
Shallow junction formation and high dopant activation rate of MOS devices |
摘要 |
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; implanting carbon into the semiconductor substrate; and implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom. The n-type impurity may include phosphorous dimer or phosphorous tetramer.
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申请公布号 |
US2008293204(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20070804927 |
申请日期 |
2007.05.21 |
申请人 |
NIEH CHUN-FENG;KU KEH-CHIANG;CHENG NAI-HAN;CHEN CHI-CHUN;LIN LI-TE S |
发明人 |
NIEH CHUN-FENG;KU KEH-CHIANG;CHENG NAI-HAN;CHEN CHI-CHUN;LIN LI-TE S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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