发明名称 |
Single-Poly Non-Volatile Memory Cell |
摘要 |
A non-volatile memory cell is provided that includes: a substrate including diffusion regions for a read-out transistor; a capacitor formed in a poly-silicon layer adjacent the substrate, the capacitor including a floating gate for the read-out transistor and a control gate, the floating gate and the control gate each having finger extensions, the finger extensions from the floating gate interdigitating with the finger extensions from the control gate; and a programming line coupled to the control gate.
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申请公布号 |
US2008291728(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080109331 |
申请日期 |
2008.04.24 |
申请人 |
TERZIOGLU ESIN;WINOGRAD GIL I;AFGHAHI MORTEZA CYRUS |
发明人 |
TERZIOGLU ESIN;WINOGRAD GIL I.;AFGHAHI MORTEZA CYRUS |
分类号 |
G11C16/06;H01L29/788;H01L29/94 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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