发明名称 |
MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The invention provides a memory cell. The memory cell is disposed on a substrate and comprises a plurality of isolation structures defining at least a fin structure in the substrate. Further, the surface of the fin structure is higher than the surface of the isolation structure. The memory cell comprises a doped region, a gate, a charge trapping structure and a source/drain region. The doped region is located in a top of the fin structure and near a surface of the top of the fin structure and the doped region has a first conductive type. The gate is disposed on the substrate and straddled the fin structure. The charge trapping structure is disposed between the gate and the fin structure. The source/drain region with a second conductive type is disposed in the fin structures exposed by the gate and the first conductive type is different from the second conductive type.
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申请公布号 |
US2008290391(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20070958134 |
申请日期 |
2007.12.17 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSU TZU-HSUAN;LUE HANG-TING |
分类号 |
H01L21/8247;G11C11/34;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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