GaN SUBSTRATE, AND EPITAXIAL SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN substrate capable of improving the light-emitting efficiency of a semiconductor light-emitting element, an epitaxial substrate using it and a semiconductor light-emitting element.

SOLUTION: The GaN substrate 30 has a growth plane 30a having an off angle against m plane or a plane. The growth plane 30a of the GaN substrate is m plane or a plane having an off angle. When a semiconductor light-emitting element is manufactured by using the GaN substrate 30, a high light-emitting efficiency is achieved by avoiding an influence of piezoelectric field because these m plane and a plane are nonpolar planes.

COPYRIGHT: (C)2009,JPO&INPIT