| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit wherein an influence of element separation on a MOS transistor can be avoided and adjoining standard cells can be also separated as individual elements. SOLUTION: The standard cell is provided with a p-type MOS transistor wherein a first diffusion area and a first gate electrode are provided; an n-type MOS transistor wherein a second diffusion area and a second gate electrode are provided and STI is interposed in nearly parallel to a first boundary to establish element isolation from the p-type MOS transistor; a dummy p-type MOS transistor wherein a third gate electrode is provided adjacent to the first diffusion area of the p-type MOS transistor on a second boundary and the third gate electrode is connected with power supply wiring so that it may be turned off; and a dummy n-type MOS transistor wherein a fourth gate electrode is provided adjacent to the second diffusion area of the n-type MOS transistor on a second boundary and a fourth gate electrode is connected with ground wiring so that it may be turned off. COPYRIGHT: (C)2009,JPO&INPIT
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