发明名称 |
METHOD FOR FORMING STORAGE NODE OF CAPACITOR IN SEMICONDUCTOR DEVICE |
摘要 |
A method for forming a capacitor in a semiconductor device comprises forming an inter-layer layer on a semi-finished substrate; etching the inter-layer insulation layer to form a plurality of first contact holes; forming a first insulation layer on sidewalls of the first contact holes; forming a plurality of storage-node contact plugs filled into the first contact holes; forming a second insulation layer with a different etch rate from the first insulation layer over the storage-node contact plugs; forming a third insulation layer on the second insulation layer; sequentially etching the third insulation layer and the second insulation layer to form a plurality of second contact holes exposing the storage-node contact plugs; and forming the storage node on each of the second contact holes.
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申请公布号 |
US2008293212(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080168823 |
申请日期 |
2008.07.07 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SUN JUN-HYEUB;LEE SUNG-KWON;CHO SUNG-YOON |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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