| 摘要 |
A method and an apparatus for producing one or more single crystalline diamonds. One or more diamond seeds are placed in a substrate holder in a chemical vapor deposition (CVD) chamber One or more metal discs are then positioned in the chemical vapor deposition chamber such that high temperature is generated at low microwave power. A diamond forming gas is then provided adjacent to the one or more diamond seeds. Plasma is then generated from the diamond forming gas by exposing the diamond forming gas to microwave radiation. The one or more diamond seeds are then exposed to the plasma under certain conditions to form single crystalline diamonds. The position of the plasma is manipulated to provide uniform growth conditions at the growth surface of the one or more diamond seeds. |
