MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY
摘要
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.
申请公布号
WO2007117436(A3)
申请公布日期
2008.11.27
申请号
WO2007US08266
申请日期
2007.03.29
申请人
TOKYO ELECTRON, LTD.;LALLY, KEVIN;FUNK, MERRITT;SUNDARARAJAN, RADHA