| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target making it possible to suppress the generation of nodules when a transparent conductive film is formed by sputtering, and to provide their manufacturing method. <P>SOLUTION: The sputtering target composed of a sintered product of a metal oxide containing 85 to 99% by mass of [A1](a1) indium oxide, and 1 to 15% by mass of the total of [B] gallium oxide and [C] germanium oxide, wherein the sintered product comprises, as components of the indium oxide, indium oxide wherein gallium atoms are solid-dissolved by substitution and indium oxide wherein germanium atoms are solid-dissolved by substitution. <P>COPYRIGHT: (C)2009,JPO&INPIT |
