发明名称 NONVOLATILE MEMORY DEVICE AND SYSTEM INCLUDING RE-MAPPED BAD BLOCK ADDRESS, AND METHOD OF OPERATING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and system including a re-mapped bad block address, and a method of operating the same. <P>SOLUTION: The method of operating the nonvolatile memory device included in a memory card can be provided by re-mapping addresses of bad blocks in a first nonvolatile MAT in the memory card and re-mapping addresses of bad blocks in a second nonvolatile MAT in the memory card. The second nonvolatile MAT includes the blocks address-mapped with blocks in the first nonvolatile MAT. Also, a method of scanning the nonvolatile memory device for the bad blocks can be provided by sequentially scanning blocks in the nonvolatile memory device for data indicating that a respective block is a bad block starting at a starting block address that is above a lowermost block address of the nonvolatile memory device. In this case, the starting block address is based on a yield for the nonvolatile memory device. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008287862(A) 申请公布日期 2008.11.27
申请号 JP20080131248 申请日期 2008.05.19
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 HEN DAISHAKU
分类号 G11C29/04;G11C16/02;G11C16/06 主分类号 G11C29/04
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