发明名称 |
TEMPERATURE CONTROL METHOD OF CHARACTERISTIC COMPENSATION RING IN SUBSTRATE HOLDER PLASMA TREATMENT EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To suppress variations in the temporal temperature rise of a characteristic compensation ring in order to eliminate variations in treatment characteristic. SOLUTION: A substrate 10 is held by a substrate holder when predetermined treatment is applied to the substrate 10 using a plasma P in a treatment chamber. The substrate 10 is subjected to heat exchange through a substrate holding surface 20 to be regulated in temperature by a substrate temperature control mechanism 5. The characteristic compensation ring 9 that compensates the variations in processing characteristic at the periphery of the substrate 10 is provided so as to surround the periphery of the substrate 10. The characteristic compensation ring 9 is cooled by a cooling means which serves also as the substrate temperature control mechanism 5, and prevents the temporal temperature rise caused by the accumulation of heat from the plasma P. A temperature in the characteristic compensation ring 9 is controlled to conform to a temperature of the treatment. The thermally contacting performance of the characteristic compensation ring 9 to a holder body 1 is improved by a contacting performance improving means such as an electrostatic attraction mechanism 6 and the like. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008288611(A) |
申请公布日期 |
2008.11.27 |
申请号 |
JP20080193144 |
申请日期 |
2008.07.28 |
申请人 |
CANON ANELVA CORP;TOKYO ELECTRON LTD |
发明人 |
OGAWARA YONEICHI |
分类号 |
H01L21/683;C23C16/458;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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