发明名称 |
MANUFACTURING METHOD OF A SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.
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申请公布号 |
US2008293240(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080124129 |
申请日期 |
2008.05.20 |
申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. |
发明人 |
KAWADA YASUYUKI |
分类号 |
H01L21/306;H01L21/283 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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