发明名称 |
METHOD OF FORMING A DIODE AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME |
摘要 |
In a method of forming a diode, a first amorphous thin film doped with first impurities is formed on a single crystalline substrate. A second amorphous thin film doped with second impurities is formed on the first amorphous thin film. A laser beam having sufficient energy to melt both of the first and second amorphous thin films is irradiated on the first and second amorphous thin films to change crystal structures of the first and second amorphous thin films using the single crystalline substrate as a seed, so that first and second single crystalline thin films are sequentially formed on the single crystalline substrate.
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申请公布号 |
US2008293224(A1) |
申请公布日期 |
2008.11.27 |
申请号 |
US20080126120 |
申请日期 |
2008.05.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON YONG-HOON;CHOI SI-YOUNG;LEE JONG-WOOK |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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