发明名称 n-Type Thiophene Semiconductors
摘要 The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, alpha,omega-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ~0.01 cm2/Vs-some of the highest reported to date for n-type organic semiconductors.
申请公布号 US2008293937(A1) 申请公布日期 2008.11.27
申请号 US20080113662 申请日期 2008.05.01
申请人 MARKS TOBIN J;FACCHETTI ANTONIO 发明人 MARKS TOBIN J.;FACCHETTI ANTONIO
分类号 C07D409/14;C08G61/12;H01B1/12;H01L27/32;H01L51/00;H01L51/05;H01L51/30;H01L51/40 主分类号 C07D409/14
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