| 摘要 |
<p>A semiconductor device is formed on a semiconductor substrate and is provided with a power MOS transistor, which is for outputting power and is provided with a plurality of transistor cells, and a control section for controlling the power MOS transistor. The power MOS transistor and the control section are arranged adjacent to each other. The power MOS transistor is provided with a plurality of gate wirings arranged in parallel, and two facing gate feeding wirings arranged to sandwich the gate wirings from the both ends. The gate wirings are alternately connected with the two gate power feeding wirings only at one end so that the directions of the feeding currents for the adjacent gate wirings are opposite to each other.</p> |
