| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To carry out OPC (optical proximity correction) altogether even when layouts having different design rules are included. <P>SOLUTION: A mask data to be used for lithography is created in steps of: (S102) acquiring a design layout data including a first layout designed under a first design rule and a second layout including a second layout designed under a second design rule smaller than the first design rule; acquiring a pre-OPC correction data corresponding to the second layout, the data preliminarily prepared so as to obtain a desired feature of the second layout when OPC is performed on the second layout under a first OPC rule determined corresponding to the first design rule; (S108) creating an intermediate data in which the second layout in the design layout data is replaced by the pre-OPC data; and carrying out OPC correction on the intermediate data under the first OPC rule. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
