| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu wiring excellent in adhesion with a barrier layer made of TaN, formed in a wiring groove or on the surface of an interlayer connnecting path, and a method of manufacturing the Cu wiring, and specifically to provide a Cu wiring embedded in all parts of the wiring groove or the interlayer connecting path, having a good adhesion with the barrier layer even if the wiring groove or the interlayer connecting path formed in an insulating film on a semiconductor substrate is narrow in depth and deep, and to provide a method of manufacturing the Cu wiring. SOLUTION: The Cu wiring embedded in the wiring groove or the interlayer connecting path formed in the insulating film on the semiconductor substrate includes: (1) the barrier layer made of TaN, which is formed on the side of the wiring groove or the interlayer connecting path; and (2) a wiring body made of Cu containing, in total, 0.05 to 3.0 atm% of one or more elements selected from among a group of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re and Os. COPYRIGHT: (C)2009,JPO&INPIT |
