| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method capable of providing a good processed shape at a pattern part when processing a substrate using an ion beam radiating part as a mask, to allow formation of the mask of high dimensional precision. SOLUTION: In the pattern formation method, a pattern which acts as a mask when etching a substrate is formed by radiating ion beam to the substrate. The method includes a process for acquiring a dose amount of the ion beam that is at least required for the pattern to act as a mask, and a process for forming the pattern with the amount of the dose equal to or more than the minimum value acquired in the previous process, while with less dose amount than an inside part 2 of the pattern for an outside part 1 of the pattern. COPYRIGHT: (C)2009,JPO&INPIT
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