Semiconductor light emitting apparatus

摘要

A light emitting apparatus with a combination of a plurality of LED chips (102) and a phosphor layer (103) is provided to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips 102) are disposed with a gap (L) therebetween, and the phosphor layer (103) is formed on the upper surface thereof to bridge over the gaps between the LED chips (102). The phosphor layer (103) may be uniform in thickness, but preferably less in thickness over the gaps between the LED chips (102) than on the upper surface of the LED chips (102). The phosphor layer (103) is continuously formed on the upper surface of the array of the chips (102) with no phosphor layer (103) present in between the chips (102). This allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer (103) present in between the gaps.