摘要 |
<p>A semiconductor light emitting device and the manufacturing method thereof are provided to increase the optical extraction efficiency by forming the concave lens pattern on the n-type semiconductor layer. A semiconductor light emitting device comprises the first conductivity semiconductor layer(104); the concave lens pattern(106) formed on the first conductivity semiconductor layer; the second conductivity semiconductor layer(108) formed on the upper part of the concave lens pattern and the first conductivity semiconductor layer(104); the active layer(110) formed on the second conductivity semiconductor layer; the third conductivity semiconductor layer(112) formed on the active layer.</p> |