摘要 |
<p>A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl<SUB>4</SUB>, and SiHCl<SUB>3 </SUB>gases. Alternatively, the micro-feature can be exposed to (SiH<SUB>4</SUB>+HCl).</p> |