发明名称 ON DIE TERMINATION CIRCUIT IMPROVING PERFORMANCE IN HIGH FREQUENCY
摘要 An ODT circuit improving a high frequency performance using a separate driver is provided to compensate a parasitic capacitance component by operating a transistor simultaneously with an inductor, to improve a linear characteristic by maintaining impedance regularly. An ODT(On Die Termination) circuit improving a high frequency performance using a separate driver comprises the followings: a first driver(410) outputting a first control signal, and controlling an operation mode of an ODT operation by answering to an ODT enable signal; a second driver(430) outputting a second control signal, and controlling the operation mode of the ODT operation by transiting the ODT enable signal; a resistor(R) connected to an output terminal of a first and a second drivers; and a switch(450) determining the operation mode of the ODT operation, answering to the first control signal or the second control signal.
申请公布号 KR20080102892(A) 申请公布日期 2008.11.26
申请号 KR20070049937 申请日期 2007.05.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SOHN, YOUNG SOO
分类号 G11C7/10 主分类号 G11C7/10
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