发明名称 |
Semiconductor device having oxide semiconductor layer and manufacturing method therof |
摘要 |
The invention provides an active matrix EL display device comprising a thin film transistor formed over a substrate, the thin film transistor including a gate electrode over the substrate; an insulating film over the gate electrode; and an oxide semiconductor film over the gate electrode with the insulating film interposed there between; and a light emitting element electrically connected to the thin film transistor, the light emitting element including a first electrode electrically connected to the thin film transistor; a light emitting layer comprising an organic light emitting material formed over the first electrode; and a second electrode formed over the light emitting layer, wherein the oxide semiconductor film comprises an In-Ga-Zn-O based amorphous oxide semiconductor. |
申请公布号 |
EP1995787(A2) |
申请公布日期 |
2008.11.26 |
申请号 |
EP20080016239 |
申请日期 |
2006.09.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
AKIMOTO, KENGO;HONDA, TATSUYA;SONE, NORIHITO |
分类号 |
H01L29/786;G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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