| 摘要 |
A gate electrode forming method of the semiconductor device is provided to form the gate electrode having the very minute line width by performing the main etching using the minute hard mask. A gate electrode forming method of the semiconductor device includes the first step which forms the gate oxidation film(200), and the polysilicon layer(300) for the gate electrode and the first sacrificing layer(400) on the front side on the semiconductor substrate(100) to be sequentially laminated; the second step for forming the opening within the first sacrificing layer through the etching using the photosensitive pattern; the third step for removing the photosensitive pattern; the fourth step for forming spacer on the side wall within the opening; the fifth step which etches in order to remove the second sacrificing layer formed on the bottom side within the opening; the sixth step for forming the ion implantation layer on the upper surface of the polysilicon layer of the exposed domain; the seventh step for removing the second sacrificing layer and the first sacrificing layer; the eighth step for forming the gate electrode on the ion implantation layer bottom side; the ninth step for removing the ion implantation layer.
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