| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the photoelectric conversion characteristic of a photovoltaic element by forming the buffer layer of the element in an amorphous silicon film having a specific optical band gap, and containing hydrogen and an added element for widening gap at specific concentrations, respectively. SOLUTION: In a photovoltaic element, a transparent conductive film 2 of SnO2, etc., a p-layer 3 composed of a p-type a-SiC:H film which is an incidence- side doped layer, a buffer layer 4 composed of an a-Si film, an i-layer 5 composed of an i-type a-Si film which is an photoelectric active layer, an n-layer 6 composed of an n-type a-Si film, and rear-surface electrode film 7 of Al, Ag, etc., are laminated in this order upon a translucent substrate 1. The buffer layer 4 is constituted of an a-Si film having an optical band gap of >=1.75 eV and contains hydrogen and an added element for widening gap at concentrations of >=30% and <1%, respectively. Therefore, the photoelectric conversion characteristic of a photovoltaic element can be improved, because the buffer layer 4 has a wide optical band gap and a superior electric characteristic.</p> |
