发明名称 MANUFACTURING METHOD OF MEMORY ELEMENT, LASER IRRADIATION APPARATUS, AND LASER IRRADIATION METHOD
摘要 A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.
申请公布号 EP1993781(A1) 申请公布日期 2008.11.26
申请号 EP20070707553 申请日期 2007.01.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA, KOICHIRO;OISHI, HIROTADA
分类号 B23K26/067;B23K26/06;B23K101/42;G03F7/20;G06K19/07;H01L21/02;H01L21/027;H01L21/20;H01L21/28;H01L21/336;H01L21/8246;H01L27/10;H01L27/112;H01L27/12;H01L29/786 主分类号 B23K26/067
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