| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a characteristic which is aluminum free and does not depend on the size of ▵Eg. <P>SOLUTION: An active region is constituted of a DQW structure of an InGaP barrier layer 26 and an InGaAsP well layer 27 constituted by lattice matching with a GaAs substrate while guide layers 24, 28 are constituted of AlGaAs having an Al composition larger than 0.20. As a result, a difference in Ecs between guide layers 24, 28 and a well layer 27 can be set not less than 0.12eV, and the overflow of electron from the well layer 27 can be suppressed. Further, depending on the combination of InGaAsP well layer 27, a difference in Ecs can be increased while keeping a difference in Evs between the well layer 27 and the guide layers 24, 28 small as it is. Accordingly, the overflow of an electron from the well layer 27 can be suppressed while avoiding becoming a barrier for pouring holes into the well layer 27. <P>COPYRIGHT: (C)2004,JPO |
