发明名称 IMMERSION LITHOGRAPHY METHOD FOR SUPPRESSING FOCUS SHIFT INDUCED BY GLOBAL THERMAL EFFECT
摘要 <p>A dipping lithographic method is provided to suppress the focus shift due to the thermal wake effect in the dipping lithography process. A dipping lithographic method includes the step that especially successively exposes on trial the exposure field by equipping the test wafer to the dipping lithography equipment; the step of obtaining the temperature change distribution per each exposure field by sensing the temperature of the test wafer(610) using the thermal sensor(655); the step of extracting the cooling temperature distribution; the step of mounting the processing wafer to the dipping lithography equipment; the step of cooling the processing wafer according to the exposure field.</p>
申请公布号 KR20080102652(A) 申请公布日期 2008.11.26
申请号 KR20070049353 申请日期 2007.05.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, SUNG WOO
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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