SUBSTRATE ELECTRON INJECTION TECHNIQUES FOR PROGRAMMING NON-VOLATILE CHARGE STORAGE MEMORY CELLS,申请号EP20050802297-传众专利搜索

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发明名称	SUBSTRATE ELECTRON INJECTION TECHNIQUES FOR PROGRAMMING NON-VOLATILE CHARGE STORAGE MEMORY CELLS
摘要
申请公布号	EP1829044(B1)	申请公布日期	2008.11.26
申请号	EP20050802297	申请日期	2005.08.05
申请人	US	发明人	US
分类号	G11C16/10;G11C16/12	主分类号	G11C16/10
代理机构		代理人
主权项
地址

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