NONVOLATILE SEMICONDUCTOR MEMORY DEVICES AND PROGRAM METHOD THEREOF

摘要

A nonvolatile semiconductor memory device programming memory cells through repetition of program loops and programming method thereof is provided to improve a program speed and to increase degree of integration by performing wired-or pass/fail test and thermal-scan pass/fail test by turns. A nonvolatile semiconductor memory device programming memory cells programs memory cells through repetition of program loops. A partial program verification operation is performed through wired-or pass/fail mode. A rest program verification operation is performed through thermal-scan pass/fail mode. Memory cells comprise one page.