THIN FILM TRANSISTOR AND DISPLAY DEVICE COMPRISING THE SAME

摘要

A TFT of a display device is provided to improve the reliability of the display device by improving the characteristics of the TFT. A source electrode(205a) and a drain electrode(205b) is located on the surface of the substrate(200). A semiconductor layer(210) including oxide is electrically connected to the source electrode and drain electrode. A first gate insulating layer(215) is located on the surface of the semiconductor layer. A second gate insulating layer(220) is located on the surface the first gate insulating layer in order to cover the side of the semiconductor layer and the first gate insulating layer. A TFT including the gate electrode is located on the surface the second gate insulating layer, and is positioned to be corresponded to the specific area of the semiconductor layer.