METHOD OF FORMING SILICIDE, APPARATUS FOR FORMING THIN FILM AND METHOD OF FORMING THIN FILM USING THE SAME

摘要

A method for forming silicide, an apparatus for forming a thin film and a method for forming the thin film using the same are provided to form silicide having the uniform and low resistance necessary for the ultra large scale integrated semiconductor device. A method for forming silicide of MOS FET includes the degas step for progressing the substrate as the electric heating treatment; the step for forming silicide with the method for depositing chemical on the top of the substrate. In the state where the degas step pumps, the gas which becomes with the outgassing is removed. The degas step is progressed while supplying one or more gas among N2, H2, and Ar and NH3.