Pattern correction method, pattern correction system, mask manufacturing method, semiconductor device manufacturing method, recording medium, and designed pattern

摘要

According to an aspect of the invention, there is provided a pattern correction method in which a shape of a target pattern is corrected in accordance with an arrangement state between the target pattern configuring a designed pattern and a vicinity pattern disposed in the vicinity of the target pattern, the pattern correction method comprises detecting a first arrangement state between a first predetermined portion of an edge of the target pattern and the vicinity pattern, detecting a second arrangement state between a second predetermined portion of the edge of the target pattern and the vicinity pattern, determining a correction value of the edge of the target pattern based on a rule in accordance with the first and second arrangement states, and adding the correction value to the edge of the target pattern.