发明名称 Resist material and pattern formation method using the same
摘要 A resist material includes a polymeric material made of a unit represented by a general formula of the following Chemical Formula; and an acid generator for generating an acid through irradiation with light: wherein R<SUP>1</SUP>, R<SUP>2 </SUP>and R<SUP>3 </SUP>are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; m>=0, n>=0, s>0 (whereas excluding m=n=0) and 1<=k<=3.
申请公布号 US7455950(B2) 申请公布日期 2008.11.25
申请号 US20070702643 申请日期 2007.02.06
申请人 PANASONIC CORPORATION 发明人 ENDO MASAYUKI;SASAGO MASARU
分类号 G03F7/00;C08F220/38;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/00
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