发明名称 |
Porogen material |
摘要 |
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
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申请公布号 |
US7456488(B2) |
申请公布日期 |
2008.11.25 |
申请号 |
US20020301109 |
申请日期 |
2002.11.21 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
XU CHONGYING;BOROVIK ALEXANDER S.;BAUM THOMAS H. |
分类号 |
H01L29/12;H01L21/316;H01L31/0256 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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