发明名称 Porogen material
摘要 A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
申请公布号 US7456488(B2) 申请公布日期 2008.11.25
申请号 US20020301109 申请日期 2002.11.21
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 XU CHONGYING;BOROVIK ALEXANDER S.;BAUM THOMAS H.
分类号 H01L29/12;H01L21/316;H01L31/0256 主分类号 H01L29/12
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