| 摘要 |
The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH<SUB>4</SUB>OH), hydrogen peroxide (H<SUB>2</SUB>O<SUB>2</SUB>), water (H<SUB>2</SUB>O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.
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