发明名称 |
Method of forming a structure for reducing lateral fringe capacitance in semiconductor devices |
摘要 |
A semiconductor structure includes a plurality of conductive lines formed within an interlevel dielectric (ILD) layer and a non-planar cap layer formed over the ILD layer and the conductive lines, wherein the cap layer is raised with respect to the conductive lines at locations between the conductive lines.
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申请公布号 |
US7456099(B2) |
申请公布日期 |
2008.11.25 |
申请号 |
US20060420253 |
申请日期 |
2006.05.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;GRUNOW STEPHAN;KUMAR KAUSHIK A.;PETRARCA KEVIN S.;RAMACHANDRAN VIDHYA;STANDAERT THEODORUS E. |
分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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