发明名称 Patterning process and resist overcoat material
摘要 In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the resist overcoat material.
申请公布号 US7455952(B2) 申请公布日期 2008.11.25
申请号 US20050105510 申请日期 2005.04.14
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;HARADA YUJI
分类号 G03F7/00;C08F2/00;C08F12/30;G03F7/004;G03F7/11;G03F7/20 主分类号 G03F7/00
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