| 摘要 |
A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface and a rear surface; forming a plurality of semiconductor regions, each of which having semiconductor elements formed on the active surface of the semiconductor wafer; forming cutting regions on the outer periphery of the semiconductor regions on the active surface of the semiconductor wafer; forming, on the cutting region, a first groove which does not penetrate the semiconductor wafer; forming, on the rear surface of the semiconductor wafer, a second groove which does not penetrate to the first groove in the position corresponding to the cutting region; decreasing a thickness of the semiconductor wafer, connecting the first groove and the second groove, and dividing each of the semiconductor regions from the semiconductor wafer by executing isotropic etching to the rear surface of the semiconductor wafer; and obtaining a plurality of individual semiconductor devices.
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